SUM90N10-8M2P-E3【PDF 2/8 页】MOSFET N-CH D-S 100V D2PAK

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SUM90N10-8m2P

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V (BR)DSS

V GS(th)

I GSS

V DS = 0 V, I D = 250 μA

V DS = V GS , I D = 250 μA

V DS = 0 V, V GS = ± 20 V

100

2.5

4.5

± 250

V DS = 100 V, V GS = 0 V

Zero Gate Voltage Drain Current

I DSS

V DS = 100 V, V GS = 0 V, T J = 125 °C

μA

V DS = 100 V, V GS = 0 V, T J = 150 °C

250

On-State Drain Current a

I D(on)

V DS ?? 10 V, V GS = 10 V

Drain-Source On-State Resistance a

Forward Transconductance a

R DS(on)

g fs

V GS = 10 V, I D = 20 A

V GS = 10 V, I D = 20 A, T J = 125 °C

V DS = 15 V, I D = 20 A

0.0067

0.0127

0.0082

0.0170

Dynamic b

Input Capacitance

C iss

6290

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge c

C oss

C rss

Q g

V GS = 0 V, V DS = 50 V, f = 1 MHz

535

182

150

Gate-Source

Charge c

Q gs

V DS = 50 V, V GS = 10 V, I D = 85 A

Gate-Drain Charge c

Q gd

Gate Resistance

Turn-On Delay Time

R g

t d(on)

f = 1 MHz

0.28

1.4

2.8

Rise Time c

Turn-Off Delay Time

t r

t d(off)

V DD = 50 V, R L = 0.588 ?

I D ? 85 A, V GEN = 10 V, R g = 1 ?

Fall Time c

t f

Source-Drain Diode Ratings and Characteristics (T C = 25 °C)

Continuous Current

Pulsed Current

I S

I SM

240

Forward Voltage a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

V SD

t rr

I RM(REC)

Q rr

I F = 30 A, V GS = 0 V

I F = 75 A, di/dt = 100 A/μs

0.85

1.5

100

4.5

130

μC

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 74643

S12-0335-Rev. B, 13-Feb-12

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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